MOCVD deposited GaN on sapphire, PSS wafers deposition services for LED technology, power devices | Martini Tech

GaN on sapphire

MOCVD GaN on PSS wafers deposition services for LED and power devices

MOCVD (metalorganic vapour phase epitaxy) deposition of GaN (gallium nitride) on PSS substrates is a relatively new but very promising technology for power devices and LEDs.
GaN-based power devices deliver better performances than existing silicon MOSFETs as GaN is an optimal material for many power-related applications such as RF systems due to outstanding physical properties (very high breakdown voltages and high electron mobility). Moreover, GaN on sapphire technology has the advantage of using relatively cheap sapphire substrates and such substrates can also be processed by the same machines and tools that are currently used in many back-end processes of the traditional semiconductor industry.
  • Sapphire substrate with MOCVD-deposited GaN thin layer (view)
Patterned sapphire substrate close-by view
MOCVD-deposited GaN on PSS

In addition to the power-devices market, GaN is now according to many the material of choice for creating high-brightness blue-light emitting diodes (LEDs).
Substrates using GaN single crystals have been developed, however so far they have been proved very expensive, deposition of GaN on SiC substrates is also quite costly due to the high cost of the wafers.
Martini Tech offers deposition of GaN thin film on PSS substrates (GaN on sapphire substrates) at low cost.
In addition to this, we offer patterning of GaN-deposited and GaN substrates using mask aligners, E-Beam machines and nanoimprint machines.
Our nanoimprint services can be effectively used to pattern GaN-on-sapphire substrates at a very reasonable cost and high speed.

Please visit our nanoimprint lithography services page for more details on how nanoimprint lithography can be used to pattern various kinds of substrates.
In case you may need additional information, please feel free to contact us.

 

Specifications of sapphire wafer with GaN thin film

 

GaN conditions XRC data Wafer structure
Carrier density Thickness
Undoped GaN
  • n<1E17cm-3
  • 2-6µm
  • FWHM of GaN(0002): ~260arcsec FWHM of GaN(10-12): ~380arcsec
  • Undoped GaN/Sapphire Thickness
    Undoped GaN (n<1E17cm-3)
    Sapphire (0001) substrate
    2-6µm
n-GaN
  • 1E18cm-3<n<1E19cm-3
  • 0.2-3µm
-
  • n-GaN/Undoped GaN/Sapphire Thickness
    n-GaN
    Undoped GaN (n<1E17cm-3)
    Sapphire (0001) substrate
    0.2-3µm
    2-6µm
p-GaN
  • p = 1E17cm-3-3E17cm-3
  • 0.2-2µm
-
  • p-GaN/Undoped GaN/Sapphire Thickness
    p-GaN
    Undoped GaN (n<1E17cm-3)
    Sapphire (0001) substrate
    0.2-2µm
    2-6µm
Test conditions: substrate diameter = 2 inches, substrate thickness= 430µm